2 ans

Boron nitride- epigraphene epitaxial heterostructure for nanoelectronics

This project concerns the development of graphene/boron nitride (BN) epitaxial hetero-structures, to study the electronic properties of a novel generation of electronic devices. (22/12/2020)
Claire Berger - Contacter
Unité Mixte Internationale Georgia Tech-CNRS Metz, France, with extended visits to GTAtlanta,
USA.

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